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november 2013 fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 1 to-220 g d s to-220f g d s g s d fcp7n60 / FCPF7N60 n-channel superfet ? mosfet 600 v, 7 a, 600 m features ?650 v @ t j = 150 o c ?typ. r ds(on) = 530 m ? ultra low gate charge (typ. q g = 23 nc) ? low effective output capacitance (typ. c oss(eff.) = 60 pf) ? 100% avalanche tested ?rohs compliant application ? lcd/led/pdp tv ? solar inverter ? ac-dc power supply description superfet ? mosfet is fairchild se miconductor?s first genera- tion of high voltage super-junction (sj) mosfet family that is utilizing charge balance tec hnology for outstanding low on- resistance and lower gate charge performance. this technology is tailored to minimize conducti on loss, provide superior switch- ing performance, dv/dt rate and higher avalanche energy. con- sequently, superfet mosfet is ve ry suitable for the switching power applications such as pfc, server/telecom power, fpd tv power, atx power and industrial power applications. absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter fcp7n60 FCPF7N60 / FCPF7N60ydtu unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 7 4.4 7* 4.4* a a i dm drain current - pulsed (note 1) 21 21* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 230 mj i ar avalanche current (note 1) 7a e ar repetitive avalanche energy (note 1) 8.3 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 83 0.67 31 0.25 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 c symbol parameter fcp7n60 FCPF7N60 / FCPF7N60ydtu unit r jc thermal resistance, junction-to-case, max. 1.5 4.0 c/w r ja thermal resistance, junction-to-ambient, max. 62.5 62.5 *drain current limited by maximum junction temperature. g s d to-220f y-formed
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted. notes: 1. repetitive rating: pulse-width li mited by maximum junction temperature. 2. i as = 3.5 a, v dd = 50 v, r g = 25 , starting t j = 25 c. 3. i sd 7 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics. part number top mark package packing method reel size tape width quantity fcp7n60 fcp7n60 to220 tube n/a n/a 50 units FCPF7N60 FCPF7N60 to220f tube n/a n/a 50 units FCPF7N60ydtu FCPF7N60 to-220f (y-formed) tube n/a n/a 50 units symbol parameter conditions min. typ. max. unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0 v, i d = 250 a, t j = 150 c -- 650 -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.6--v/ c bv ds drain-source avalanche breakdown voltage v gs = 0 v, i d = 7 a -- 700 -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v v ds = 480 v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3.0--5.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.5 a -- 0.53 0.6 g fs forward transconductance v ds = 40 v, i d = 3.5 a -- 6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1 mhz -- 710 920 pf c oss output capacitance -- 380 500 pf c rss reverse transfer capacitance -- 34 -- pf c oss output capacitance v ds = 480 v, v gs = 0 v, f = 1 mhz -- 22 29 pf c oss(eff.) effective output capacitance v ds = 0 v to 400 v, v gs = 0 v -- 60 -- pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 7 a, v gs = 10 v, r g = 25 (note 4) -- 35 80 ns t r turn-on rise time -- 55 120 ns t d(off) turn-off delay time -- 75 160 ns t f turn-off fall time -- 32 75 ns q g total gate charge v ds = 480 v, i d = 7 a, v gs = 10 v (note 4) -- 23 30 nc q gs gate-source charge -- 4.2 5.5 nc q gd gate-drain charge -- 11.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 7 a i sm maximum pulsed drain-source diode forward current -- -- 21 a v sd drain-source diode forward voltage v gs = 0 v, i s = 7 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 7 a, di f /dt =100 a/ s -- 360 -- ns q rr reverse recovery charge -- 4.5 -- c
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 note 1. v ds = 40v 2. 250 s pulse test -55 c 150 c 25 c i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs = 20v v gs = 10v note : t j = 25 c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 25 c 150 c notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 7a v gs , gate-source voltage [v] q g , total gate charge [nc]
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fcp7n60 for FCPF7N60 figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 3.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 us dc 100 ms 10 ms 1 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 i d , drain current [a] t c , case temperature [? ]
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 11-1. transient thermal response curve for fcp7n60 figure 11-2. transient thermal response curve for FCPF7N60 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1. z jc (t) = 1.5 c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1. z jc (t) 4.0 c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w]
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 6 figure 12. gate charge test circuit & waveform figure 13. resistive switch ing test circuit & waveforms figure 14. unclamped inductive sw itching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const.
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 7 figure 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 8 mechanical dimensions figure 16. to-220, molded, 3-lead, jedec variation ab package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt220-003
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 9 mechanical dimensions figure 17. to220, molded, 3-lead, full pack, eiaj sc91, straight lead package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-003
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 10 mechanical dimensions figure 18. to220, molded, 3-lead , full pack, eiaj sc91, y-formed package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawin g and contact a fairchild semic onductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-fa3
fcp7n60 / FCPF7N60 ? n-channel superfet ? mosfet ?2005 fairchild semiconductor corporation fcp7n60 / FCPF7N60 rev. c1 www.fairchildsemi.com 11 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ?

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